Magnetotransport property of HgCdTe inversion layer
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (2): 027301     doi:10.7498/aps.61.027301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Magnetotransport property of HgCdTe inversion layer
Gao Kuang-Hong1 2, Wei Lai-Ming2, Yu Guo-Lin2, Yang Rui2, Lin Tie2, Wei Yan-Feng3, Yang Jian-Rong3, Sun Lei2, Dai Ning2, Chu Jun-Hao1 2
1. Key Laboratory of Polar Materials and Devices of Ministry of Education, School of Science and Technology of Information, East China Normal University, Shanghai 200062, China;
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;
3. Key Laboratory of Infrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
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