Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (2): 027202     doi:10.7498/aps.61.027202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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