Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (7): 3363-3369    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure
Meng Zhi-Guo1, Wu Chun-Ya1, Li Juan1, Xiong Shao-Zhen1, Kwok Hoi S.2, Man Wong2
(1)南开大学信息学院光电子器件与技术研究所,光电子薄膜器件与技术天津市重点实 验室,光电信息技术科学教育部重点实验室(南开大学,天津大学),天津 300071; (2)香港科技大学电机电子工程系,香港九龙清水弯
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