Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (7): 3351-3356    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors
Zeng Zhong-Ming1, Han Xiu-Feng1, Du Guan-Xiang1, Zhan Wen-Shan1, Wang Yong2, Zhang Ze2
(1)中国科学院物理研究所(凝聚态物理国家实验室) 磁学国家重点实验室,100080 北京; (2)中国科学院物理研究所(凝聚态物理国家实验室) 先进材料与结构分析电镜实验室,100080 北京
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