Abstract：Since its discovery in 2004, graphene has attracted great attention because of its unique chemical bonding structure, which has excellent chemical, thermal, mechanical, electrical and optical properties. Due to the zero band gap material, graphene has limited its development in the field of Nano Electronics. Only expanding the band gap of the graphene can promote the application of graphene in Nano Electronics. In this paper, we constructed three models of intrinsic graphene, N-doped graphene and B-doped graphene. The energy band structures, electronic density of states and optical properties of N/B doped graphene with intrinsic graphene and different doping concentrations were studied. The absorption spectra, the reflection spectra, the refractive index, the conductivity and the dielectric function were studied. The study shows that the electronic states near the Fermi level of N/B doped graphene are mainly composed of C-2p and N-2p/B-2p orbitals, and N/B doping can induce the change of the Fermi level and the photoelectric properties of graphene. The conclusion of this paper can provide a theoretical basis for the application of graphene in optoelectronic devices.